p4sma6.8a series vishay semiconductors formerly general semiconductor document number 88367 www.vishay.com 18-jul-02 1 surface mount t rans z orb transient voltage suppressors v (br) unidirectional 6.8 to 540v v (br) bidirectional 6.8 to 220v peak pulse power 400w extended voltage range* devices for bidirectional applications for bi-directional devices, use suffix ca (e.g. p4sma10ca). electrical characteristics apply in both directions. maximum ratings & thermal characteristics ratings at 25? ambient temperature unless otherwise specified. parameter symbol value unit peak power dissipation with a 10/1000 s waveform (1)(2) (fig. 1) p ppm 400 w peak pulse current with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on infinite heatsink, t a = 50? p m(av) 1.0 w peak forward surge current 8.3ms single half sine-wave i fsm 40 a uni-directional only (2) thermal resistance junction to ambient air (3) r ja 120 ?/w thermal resistance junction to leads r jl 30 ?/w operating junction and storage temperature range t j , t stg 65 to +150 ? notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25? per fig. 2. rating is 300w above 91v. (2) mounted on 0.2 x 0.2 (5.0 x 5.0mm) copper pads to each terminal (3) mounted on minimum recommended pad layout 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) max. 0.194 (4.93) 0.208 (5.28) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band dimensions in inches and (millimeters) do-214ac (sma) features plastic package has underwriters laboratory flammability classification 94v-0 optimized for lan protection applications ideal for esd protection of data lines in accordance with iec 1000-4-2 (iec801-2) ideal for eft protection of data lines in accordance with iec1000-4-4 (iec801-4) low profile package with built-in strain relief for surface mounted applications glass passivated junction low incremental surge resistance, excellent clamping capability 400w peak pulse power capability with a 10/1000 s wave- form, repetition rate (duty cycle): 0.01% (300w above 91v) very fast response time * voltages above 220v available q3-2002 mechanical data case: jedec do-214ac molded plastic over passivated chip terminals: solder plated, solderable per mil-std-750, method 2026. high temperature soldering guaranteed: 250 c/10 seconds at terminals. polarity: for uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal tvs operation. mounting position: any weight: 0.002oz., 0.064g packaging codes ?options (antistatic): 51 1k per bulk box, 20k/carton 61 1.8k per 7 plastic reel (12mm tape), 36k/carton 5a 7.5k per 13 plastic reel (12mm tape), 75k/carton 0.094 max. (2.38 max.) 0.220 (5.58) ref 0.066 min. (1.68 min.) 0.052 min. (1.32 min.) mounting pad layout
p4sma6.8a series vishay semiconductors formerly general semiconductor www.vishay.com document number 88367 2 18-jul-02 electrical characteristics ratings at 25 c ambient temperature unless otherwise specified. v f = 3.5v at i f = 25a (uni-directional only) breakdown voltage maximum maximum maximum maximum general device marking v (br) at i t (1) test stand-off reverse peak pulse clamping temp. semiconductor code (v) current voltage leakage current voltage at coefficient part number i t v wm at v wm i ppm (2) i ppm of v (br) uni bi min max (ma) (v) i d (4) ( a) (a) v c (v) (% / ?) p4sma6.8a 6v8a 6v8c 6.45 7.14 10 5.80 1000 38.1 10.5 0.057 p4sma7.5a 7v5a 7v5c 7.13 7.88 10 6.40 500 35.4 11.3 0.061 p4sma8.2a 8v2a 8v2c 7.79 8.61 10 7.02 200 33.1 12.1 0.065 p4sma9.1a 9v1a 9v1c 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068 p4sma10a 10a 10c 9.50 10.5 1.0 8.55 10 27.6 14.5 0.073 p4sma11a 11a 11c 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075 p4sma12a 12a 12c 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078 p4sma13a 13a 13c 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081 p4sma15a 15a 15c 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084 p4sma16a 16a 16c 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086 p4sma18a 18a 18c 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.089 p4sma20a 20a 20c 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090 p4sma22a 22a 22c 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092 p4sma24a 24a 24c 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.09 p4sma27a 27a 27c 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096 p4sma30a 30a 30c 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097 p4sma33a 33a 33c 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098 p4sma36a 36a 36c 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099 p4sma39a 39a 39c 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100 p4sma43a 43a 43c 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101 p4sma47a 47a 47c 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101 p4sma51a 51a 51c 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102 p4sma56a 56a 56c 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103 p4sma62a 62a 62c 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104 p4sma68a 68a 68c 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104 p4sma75a 75a 75c 71.3 78.8 1.0 64.1 1.0 3.9 104 0.105 p4sma82a 82a 82c 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105 p4sma91a 91a 91c 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106 p4sma100a 100a 100c 95.0 105 1.0 85.5 1.0 2.2 137 0.106 p4sma110a 110a 110c 105 116 1.0 94.0 1.0 2.0 152 0.107 p4sma120a 120a 120c 114 126 1.0 102 1.0 1.8 165 0.107 p4sma130a 130a 130c 124 137 1.0 111 1.0 1.7 179 0.107 p4sma150a 150a 150c 143 158 1.0 128 1.0 1.4 207 0.106 p4sma160a 160a 160c 152 168 1.0 136 1.0 1.4 219 0.108 p4sma170a 170a 170c 162 179 1.0 145 1.0 1.3 234 0.108 p4sma180a 180a 180c 171 189 1.0 154 1.0 1.2 246 0.108 p4sma200a 200a 200c 190 210 1.0 171 1.0 1.1 274 0.108 p4sma220a 220a 220c 209 231 1.0 185 1.0 0.9 328 0.108 p4sma250a 250a 237 263 1.0 214 1.0 0.87 344 0.110 p4sma300a 300a 285 315 1.0 256 1.0 0.73 414 0.110 p4sma350a 350a 333 368 1.0 300 1.0 0.62 482 0.110 p4sma400a 400a 380 420 1.0 342 1.0 0.55 548 0.110 p4sma440a 440a 418 462 1.0 376 1.0 0.50 602 0.110 p4sma480a 480a 456 504 1.0 408 1.0 0.46 658 0.110 p4sma510a 510a 485 535 1.0 434 1.0 0.43 698 0.110 p4sma540a 540a 513 567 1.0 459 1.0 0.41 740 0.110 notes: (1) pulse test: t p 50ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee ca62.35 (4) for bidirectional types with v r 10 volts and less, the i d limit is doubled
p4sma6.8a series vishay semiconductors formerly general semiconductor document number 88367 www.vishay.com 18-jul-02 3 0 25 50 75 100 0 75 25 50 100 125 150 175 200 peak pulse power (p pp ) or current (i ppm ) derating in percentage, % t a ambient temperature ( c) 1 5 10 50 100 t p pulse duration (sec) fig. 2 pulse derating curve p ppm peak pulse power (kw) fig. 1 peak pulse power rating curve 0.1 1 10 100 0.1 s 1.0 s10 s t d pulse width (sec.) 100 s 1.0ms 10ms 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas transient thermal impedance ( c/w) fig. 5 typical transient thermal impedance non-repetitive pulse waveform shown in fig. 3 t a = 25 c fig. 6 - maximum non-repetitive forward surge current uni-directional only i fsm peak forward surge current (a) number of cycles at 60 hz c j junction capacitance (pf) 10 100 1,000 10,000 10 1 100 200 v (br) breakdown voltage (v) t j = 25 c f = 1.0mhz vsig = 50mvp-p measured at stand-off voltage, v wm uni-directional bi-directional 10 50 100 200 t j = t j max. 8.3ms single half sine-wave (jedec method) fig. 4 typical junction capacitance 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 0 50 100 150 i ppm peak pulse current, % i rsm fig. 3 pulse waveform t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak value i ppm half value ipp i ppm 2 td 10/1000 sec. waveform as defined by r.e.a. 0 1.0 2.0 3.0 4.0 t time (ms) p4sma6.8a -- p4sma91a p4sma100a -- p4sma220a ratings and characteristic curves (t a = 25 c unless otherwise noted)
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